The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Oct. 11, 2013
Thermally assisted multi-level mram cell and method for writing a plurality of bits in the mram cell
Crocus Technology SA, Grenoble, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
CROCUS TECHNOLOGY SA, Grenoble, FR;
Abstract
Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a reference magnetic layer having a reference magnetization, a tunnel barrier layer, and a SAF storage magnetic layer including a first and second storage magnetization being coupled antiparallel through a storage coupling layer and freely orientable at a high temperature threshold. The method includes: heating the magnetic tunnel junction to the high temperature threshold; and applying a write magnetic field to orient the first and second storage magnetization; wherein the high temperature threshold includes one of a first or third high temperature threshold such as to orient the first storage magnetization respectively antiparallel or parallel to the second storage magnetization; or a second high temperature threshold such as to orient the first storage magnetization with an angle below 180° with respect to the second storage magnetization.