The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jun. 07, 2013
Crocus Technology SA, Grenoble Cedex, FR;
Jérémy Alvarez-Hérault, Grenoble, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Ricardo Sousa, Grenoble, FR;
CROCUS TECHNOLOGY SA, Grenoble, FR;
Abstract
Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.