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For the Inventor, By the Inventor

Richardson, TX, United States of America

Ih-Chin Chen

USPTO Granted Patents = 18

 

Average Co-Inventor Count = 2.1

ph-index = 10

Forward Citations = 289(Granted Patents)


Location History:

  • Dallas, TX (US) (1989)
  • Richardson, TX (US) (1989 - 2005)

Company Filing History:

goldMedal18 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 1989-2005

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18 patents (USPTO):Explore Patents
1. 6960499 - Dual-counterdoped channel field effect transistor and method (2005-11-01),
2. 6420236 - Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices (2002-07-16),
3. 6313010 - Integrated circuit insulator and method (2001-11-06),
4. 6306724 - Method of forming a trench isolation structure in a stack trench capacitor fabrication process (2001-10-23),
5. 6287924 - Integrated circuit and method (2001-09-11),
6. 6228725 - Semiconductor devices with pocket implant and counter doping (2001-05-08),
7. 6147384 - Method for forming planar field effect transistors with source and drain (2000-11-14),
8. 6143625 - Protective liner for isolation trench side walls and method (2000-11-07),
9. 5917219 - Semiconductor devices with pocket implant and counter doping (1999-06-29),
10. 5913135 - Method for forming planar field effect transistors with source and drain (1999-06-15),
11. 5909628 - Reducing non-uniformity in a refill layer thickness for a semiconductor (1999-06-01),
12. 5894145 - Multiple substrate bias random access memory device (1999-04-13),
13. 5739569 - Non-volatile memory cell with oxide and nitride tunneling layers (1998-04-14),
14. 5595925 - Method for fabricating a multiple well structure for providing multiple (1997-01-21),
15. 5548548 - Pass transistor for a 256 megabit dram with negatively biased substrate (1996-08-20),

Title: Innovations of Ih-Chin Chen

Introduction

Ih-Chin Chen is a prominent inventor based in Richardson, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

Among his latest patents is the "Dual-counterdoped channel field effect transistor and method." This invention discloses a field effect transistor featuring a channel with a first doped region and a second doped region underlying the first. The first doped region is doped with arsenic, while the second is doped with phosphorus. This design allows for high charge-carrier mobility, reducing capacitance and response time. Another notable patent is "Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices." This system aims to produce metal gate MOSFETs with relatively low threshold voltages through a series of precise steps involving gate oxide layers and reducing gas treatments.

Career Highlights

Ih-Chin Chen is currently employed at Texas Instruments Corporation, where he continues to innovate and develop advanced semiconductor technologies. His work has had a profound impact on the industry, contributing to the efficiency and performance of various electronic devices.

Collaborations

Throughout his career, Chen has collaborated with notable colleagues, including Amitava Chatterjee and Somnath S Nag. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Ih-Chin Chen's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative work continues to shape the future of electronic devices.

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