The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Sep. 10, 1998
Applicant:
Inventors:
Ih-Chin Chen, Richardson, TX (US);
Amitava Chatterjee, Plano, TX (US);
Somnath S Nag, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438435 ; 438424 ; 438427 ; 148D / ;
Abstract
An isolation trench (60) may comprise a trench (20) formed in a semiconductor layer (12). A barrier layer (22) may be formed along the trench (20). A protective liner (50) may be formed over the barrier layer (22). The protective liner (50) may comprise a chemically deposited oxide. A high density layer of insulation material (55) may be formed in the trench (20) over the protective liner (50).