The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jun. 28, 1995
Ih-Chin Chen, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A trench isolation structure can be formed in a stack trench capacitor fabrication process by forming a trench region (,) through a buffer layer (,) and an interface layer (,) and into a semiconductor substrate (,). A trench wall layer (,) is grown on inner walls of the trench region (,) and in contact with the interface layer (,). A trench filler layer (,) is formed on the buffer layer (,) and on the trench wall layer (,) within the trench region (,). The trench filler layer (,) is removed from the buffer layer (,) but remains within the trench region (,). A storage dielectric (,) is deposited on the buffer layer (,) and on the trench filler layer (,) within the trench region (,). A field plate layer (,) is deposited on the storage dielectric (,) and within the trench region (,). The field plate layer (,), the storage dielectric (,), the buffer layer (,), and the interface layer (,) lying outside the trench region (,) are removed. A trench cap layer (,) is formed on the semiconductor substrate (,) such that the trench filler layer (,), the storage dielectric (,) and the field plate layer (,) within the trench region (,) are surrounded by the trench wall layer (,) and the trench cap layer (,) in order to form the trench isolation structure. The trench isolation structure can be used for inter-active region and inter-well isolation.