The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2002
Filed:
Aug. 17, 2000
Applicant:
Inventors:
Jerry C. Hu, Plano, TX (US);
Hong Yang, Dallas, TX (US);
Amitava Chatterjee, Plano, TX (US);
Ih-Chin Chen, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/14763 ;
Abstract
A system for producing metal gate MOSFETs having relatively low threshold voltages is disclosed, comprising the steps of forming a gate oxide layer on a semiconductor substrate, forming a dummy gate on the substrate, removing the dummy gate after further processing and depositing a lower metallic gate material on said gate oxide; treating the semiconductor device with a reducing gas immediately after deposition of the lower metallic gate material, and depositing an upper gate metal over the lower gate material.