The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 1996
Filed:
Dec. 19, 1994
Applicant:
Inventors:
Amitava Chatterjee, Plano, TX (US);
Jiann Liu, Irving, TX (US);
Purnendu Mozumder, Plano, TX (US);
Mark S Rodder, University Park, TX (US);
Ih-Chin Chen, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365149 ; 365182 ; 36518909 ; 257327 ;
Abstract
A design to attain a pass transistor for a 256 Mbit DRAM part. The transistor having a gate length of about 0.3 .mu.m, a t.sub.ox of about 85 .ANG., which is much thicker than the .about.65 .ANG. t.sub.ox for 0.25 .mu.m logic technology, a V.sub.WL of 3.75 V, a V.sub.sub of -1 V, arsenic LDD and a boron concentration in the channel region of about 2.7.times.10.sup.17 /cm.sup.3 are the desired technological choices for 256 Mbit DRAM devices.