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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Igor G Kouznetsov

USPTO Granted Patents = 40 


Average Co-Inventor Count = 3.5

ph-index = 10

Forward Citations = 684(Granted Patents)


Location History:

  • San Jose, CA (US) (2011 - 2013)
  • Santa Clara, CA (US) (2003 - 2020)
  • San Francisco, CA (US) (2014 - 2020)

Company Filing History:

goldMedal30 out of 3,549 
 
Cypress Semiconductor Corporation
 patents
silverMedal4 out of 669 
 
Sandisk 3d LLC
 patents
bronzeMedal3 out of 145 
 
Matrix Semiconductor, Inc.
 patents
4. 2 out of 38 
 
Longitude Flash Memory Solutions Ltd.
 patents
5. 1 out of 4,549 
 
Sandisk Technologies Inc.
 patents

Years Active: 2003-2020

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Areas of Expertise:
Embedded SONOS
Non-Volatile Memory
High Voltage Architecture
Charge Storage Devices
Drain Extended MOS Transistors
Memory Architecture
Floating Gate EEPROM
Three Terminal Nonvolatile Memory
Integration of Logic CMOS
Asymmetric Breakdown Voltage
Vertical Gated Diode
Self-Aligned Graded Junctions
40 patents (USPTO):Explore Patents
1. 10784356 - Embedded sonos with triple gate oxide and manufacturing method of the same (2020-09-22),
2. 10644021 - Dense arrays and charge storage devices (2020-05-05),
3. 10373688 - High voltage architecture for non-volatile memory (2019-08-06),
4. 10262747 - Method to reduce program disturbs in non-volatile memory cells (2019-04-16),
5. 10217639 - Method of forming drain extended MOS transistors for high voltage circuits (2019-02-26),
6. 10192622 - Systems, methods, and apparatus for memory cells with common source lines (2019-01-29),
7. 10103244 - Drain extended MOS transistors with split channel (2018-10-16),
8. 10062573 - Embedded SONOS with triple gate oxide and manufacturing method of the same (2018-08-28),
9. 10032517 - Memory architecture having two independently controlled voltage pumps (2018-07-24),
10. 10002878 - Complementary SONOS integration into CMOS flow (2018-06-19),
11. 9997528 - Complimentary SONOS integration into CMOS flow (2018-06-12),
12. 9922988 - Embedded SONOS based memory cells (2018-03-20),
13. 9899089 - Memory architecture having two independently controlled voltage pumps (2018-02-20),
14. 9847137 - Method to reduce program disturbs in non-volatile memory cells (2017-12-19),
15. 9818484 - Systems, methods, and apparatus for memory cells with common source lines (2017-11-14),

Title: Igor G. Kouznetsov: Innovator in Memory Device Technologies

Introduction

Igor G. Kouznetsov, located in Santa Clara, CA, is a distinguished inventor known for his contributions to memory device technologies. With an impressive portfolio of 40 patents, his work has significantly impacted the field of semiconductor memory devices. His innovations in charge storage technologies and transistor integration have paved the way for advancements in non-volatile memory solutions.

Latest Patents

Among his latest patents, Kouznetsov has developed a method for integrating embedded silicon-oxide-nitride-oxide-silicon (SONOS) transistors into a complementary metal-oxide-semiconductor (CMOS) flow, which features a triple gate oxide structure. This innovative method relates to the manufacturing of memory devices that can significantly enhance performance and efficiency. Another recent patent involves a monolithic three-dimensional array of charge storage devices. This patent describes the design of device levels, where at least one surface between successive levels is planarized through chemical mechanical polishing, optimizing the design for better functionality.

Career Highlights

Over the years, Kouznetsov has made remarkable contributions while working with prominent companies such as Cypress Semiconductor Corporation and SanDisk 3D LLC. His work has centered around advancing memory technologies and solutions, utilizing his expertise to achieve innovative outcomes that address industry challenges.

Collaborations

Throughout his career, Kouznetsov has collaborated with brilliant minds, including coworkers like Venkatraman Prabhakar and Bogdan I. Georgescu. Through these collaborations, he has been able to leverage diverse perspectives and experiences to enhance his innovations, leading to remarkable developments in the field.

Conclusion

Igor G. Kouznetsov’s dedication to innovation in memory device technologies has established him as a key player in the semiconductor industry. His extensive patent portfolio and collaborations with other experienced professionals highlight his influence and commitment to pushing the boundaries of technology. His work will undoubtedly continue to inspire future advancements in the realm of semiconductor memory devices.

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