The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Oct. 12, 2017
Applicant:

Cypress Semiconductor Corporation, San Jose, CA (US);

Inventors:

Xiaojun Yu, Shanghai, CN;

Venkatraman Prabhakar, Pleasanton, CA (US);

Igor Kouznetsov, San Francisco, CA (US);

Long Hinh, San Jose, CA (US);

Bo Jin, Cupertino, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0466 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01);
Abstract

A method for operating a memory device includes the steps of providing a first voltage to a first transistor of a first memory cell and a third transistor of a second memory cell, providing a second voltage to a gate of a second transistor of the first memory cell and a gate of a fourth transistor of the second memory cell, and providing a third voltage to a gate of the first transistor of the first memory cell and a gate of the third transistor of the second memory cell. Other embodiments are also described.


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