Cupertino, CA, United States of America

Bo Jin

This inventor holds 27 USPTO granted patents and 1 published patent application, primarily in Non-Volatile Memory. Top assignees: Cypress Semiconductor Corporation, Longitude Flash Memory Solutions Ltd.. Active years: 2002-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bo Jin. Retrieved from https://idiyas.com/inventor/bo-jin-csyg0153

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 92.6

Average Co-Inventor Count = 2.4

ph-index = 9

Forward Citations = 244(Granted Patents)


Location History:

  • Campbell, CA (US) (2002 - 2015)
  • Cupertino, CA (US) (2015 - 2024)

Company Filing History:


Years Active: 2002-2024

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Areas of Expertise:
Non-Volatile Memory
CMOS Integration
Memory Cells
Dielectric Layer
Probe Card
Semiconductor Structure
SRAM Cell Design
Shallow Trench Isolation
Soft Error Resistance
Integrated Circuits
Contact Junctions
Adapter Layer
27 patents (USPTO):Explore Patents

Title: Bo Jin: Innovator in Non-Volatile Memory Integration

Introduction

Bo Jin, a prominent inventor based in Cupertino, CA, has made significant contributions to the field of semiconductor technology, holding an impressive 27 patents to his name. His inventiveness focuses on integrating non-volatile memory devices into logic flows, enhancing the efficiency and functionality of modern electronics.

Latest Patents

One of Jin's latest patents is titled "Method of ONO Integration into Logic CMOS Flow". This embodiment describes a comprehensive method for integrating a non-volatile memory device into a logic MOS flow. The process involves several key steps: forming a pad dielectric layer of a MOS device above a first region of a substrate; establishing a channel made from a thin film of semiconducting material that connects the source and drain of the memory device; creating a patterned dielectric stack overlying the channel, which includes a tunnel layer, a charge-trapping layer, and a sacrificial top layer. The method further includes the simultaneous removal of the sacrificial top layer and the pad dielectric layer, and the formation of both a gate dielectric layer above the first region and a blocking dielectric layer above the charge-trapping layer.

Career Highlights

Throughout his career, Bo Jin has worked with notable companies such as Cypress Semiconductor Corporation and Longitude Flash Memory Solutions Ltd. His expertise in the semiconductor industry has positioned him as a key player in advancing memory technology.

Collaborations

Jin's innovations have been further fueled by collaborations with his talented coworkers, including Krishnaswamy Ramkumar and Xiaojun Yu. Their collective skills and insights have contributed to prolific advancements and the successful development of complex semiconductor solutions.

Conclusion

Bo Jin continues to be a significant force in the field of semiconductor technology, with a track record of innovative patents and collaborations that drive the industry forward. His work on integrating non-volatile memory into logic flows stands as a testament to his ingenuity and dedication to technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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