Cypress Semiconductor Corporation

Longitude Flash Memory Solutions Ltd.

Bo Jin

Krishnaswamy Ramkumar

Fredrick B Jenne

Venkatraman Prabhakar

Igor G Kouznetsov

Xiaojun Yu

Long Hinh

Qi Gu

James E Nulty

Jianmin Qiao

Kaichiu Wong

Chan-Lon Yang

Brenor L Brophy

Andrey V Zagrebelny

Thurman John Rodgers

Manoj B Roge

Shahin Sharifzadeh

Matthew D Buchanan

Ahmad Chatila

Thomas A McCleary

John O Torode

Cesar Payan

An embodiment of a method of integration of a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming a pad dielectric layer of a MOS device above a first region of a substrate; forming a channel of the memory device from a thin film of semiconducting material overlying a surface above a second region of the substrate, the channel connecting a source and drain of the memory device; forming a patterned dielectric stack overlying the channel above the second region, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer; simultaneously removing the sacrificial top layer from the second region of the substrate, and the pad dielectric layer from the first region of the substrate; and simultaneously forming a gate dielectric layer above the first region of the substrate and a blocking dielectric layer above the charge-trapping layer.

Method of ono integration into logic CMOS flow

Method of ONO integration into logic CMOS flow

A method for operating a memory device includes the steps of providing a first voltage to a first transistor of a first memory cell and a third transistor of a second memory cell, providing a second voltage to a gate of a second transistor of the first memory cell and a gate of a fourth transistor of the second memory cell, and providing a third voltage to a gate of the first transistor of the first memory cell and a gate of the third transistor of the second memory cell. Other embodiments are also described.

Systems, methods, and apparatus for memory cells with common source lines

Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause a change in a charge storage layer included in the first transistor.

Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause, via Fowler-Nordheim tunneling, a change in a charge storage layer included in the first transistor.

A memory structure including a memory array of a plurality of memory cells arranged in rows and columns, the plurality of memory cells including a pair of adjacent memory cells in a row of the memory array, wherein the pair of adjacent memory cells include a single, shared source-line through which each of the memory cells in the pair of adjacent memory cells is coupled to a voltage source. Methods of operating a memory including the memory structure are also described.

Non-volatile memory and method of operating the same

Methods of ONO integration into MOS flow are provided. In one embodiment, the method comprises: (i) forming a pad dielectric layer above a MOS device region of a substrate; and (ii) forming a patterned dielectric stack above a non-volatile device region of the substrate, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer, the charge-trapping layer comprising multiple layers including a first nitride layer formed on the tunnel layer and a second nitride layer, wherein the first nitride layer is oxygen rich relative to the second nitride layer. Other embodiments are also described.

Simultaneously forming a dielectric layer in MOS and ONO device regions

A method of ONO integration of a non-volatile memory device (e.g. EEPROM, floating gate FLASH and SONOS) into a baseline MOS device (e.g. MOSFET) is described. In an embodiment the bottom two ONO layers are formed prior to forming the channel implants into the MOS device, and the top ONO layer is formed simultaneously with the gate oxide of the MOS device.

Method of ONO integration into MOS flow

A semiconductor device memory cell () can include a built-in capacitor for reducing a soft-error rate (SER). A memory cell () can include a first inverter () and second inverter () arranged in a cross-coupled configuration. A capacitor () can be coupled between a first storage node () and second storage node (). A capacitor () can be a 'built-in' capacitor formed with interconnect wirings utilized to connect memory cell circuit components.

Soft error resistant memory cell and method of manufacture

In one embodiment, an anti-wafer structure includes a silicon on insulator (SOI) layer and a plurality of probe dice formed on the SOI layer. Each of the probe die may have a pad layout corresponding to a pad layout of a die on a wafer under test. A plurality of holes may extend through the SOI layer and the plurality of probe dice, with each hole corresponding to a pad on a probe die. The anti-wafer structure may be advantageously used in an advanced probe card. Techniques for fabricating an anti-wafer and an advanced probe card are also disclosed.

Advanced probe card and method of fabricating same

In one embodiment, a probe for testing integrated circuits includes a body having a tip and a hardening material on the tip. The hardening material helps improve the hardness of the tip. The hardening material thus allows the probe to reliably penetrate a layer to make a good electrical connection with a contact point under the layer, for example. In one embodiment, an electrically conductive coating is deposited over the hardening material.

Growing community of inventors

Cupertino, CA, United States of America

Bo Jin