For the Inventor, By the Inventor

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Dublin, Ireland

Longitude Flash Memory Solutions Ltd.

USPTO Granted Patents = 38

EPO Patents = 1

Forward Citations = 25

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26 inventors (with patents filed for the assignee):

Krishnaswamy Ramkumar (28 out of 174 patents)

Sagy Charel Levy (17 out of 64 patents)

Fredrick B Jenne (12 out of 60 patents)

4. Igor Polishchuk (8 out of 55 patents)

5. Sam G Geha (7 out of 26 patents)

6. Venkatraman Prabhakar (5 out of 56 patents)

7. Vijay Raghavan (4 out of 23 patents)

8. Gary Peter Moscaluk (4 out of 26 patents)

9. Sungkwon Lee (3 out of 12 patents)

10. Cristinel Zonte (3 out of 21 patents)

11. Vineet Argrawal (3 out of 6 patents)

12. Samuel Leshner (3 out of 16 patents)

13. Bo Jin (3 out of 27 patents)

14. Iulian Constantin Gradinariu (3 out of 30 patents)

15. Roger J Bettman (3 out of 22 patents)

38 patents: Sort by Forward Citations

1. 12464780 - Nonvolatile charge trap memory device having a high dielectric constant blocking region (2025-11-04),

2. 12266521 - Oxide-nitride-oxide stack having multiple oxynitride layers (2025-04-01),

3. 12048162 - Method of ono integration into logic CMOS flow (2024-07-23),

4. 12014800 - Low standby power with fast turn on method for non-volatile memory devices (2024-06-18),

5. 12009401 - Memory transistor with multiple charge storing layers and a high work function gate electrode (2024-06-11),

6. 11950412 - Gate fringing effect based channel formation for semiconductor device (2024-04-02),

7. 11784243 - Oxide-nitride-oxide stack having multiple oxynitride layers (2023-10-10),

8. 11721733 - Memory transistor with multiple charge storing layers and a high work function gate electrode (2023-08-08),

9. 11641745 - Embedded sonos with a high-K metal gate and manufacturing methods of the same (2023-05-02),

10. 11569254 - Method of ono integration into logic CMOS flow (2023-01-31),

11. 11456365 - Memory transistor with multiple charge storing layers and a high work function gate electrode (2022-09-27),

12. 11361826 - Asymmetric pass field-effect transistor for nonvolatile memory (2022-06-14),

13. 11257912 - Sonos stack with split nitride memory layer (2022-02-22),

14. 11251189 - Gate fringing effect based channel formation for semiconductor device (2022-02-15),

15. 11222965 - Oxide-nitride-oxide stack having multiple oxynitride layers (2022-01-11),

Longitude Flash Memory Solutions Ltd. is a leading provider of flash memory products and solutions. With a focus on innovation and reliability, we offer a wide range of high-performance flash memory solutions for various industries, including consumer electronics, automotive, industrial, and enterprise storage. Our products are designed to meet the demanding requirements of today's data-intensive applications, delivering exceptional performance, endurance, and reliability. Visit our website to learn more about our comprehensive range of flash memory solutions.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

38 Patents

#46 in Dublin

#73 in Ireland

#17,301 in the World

Dublin, Ireland

Longitude Flash Memory Solutions Ltd.

Forward Citations = 25

26 inventors:

Krishnaswamy Ramkumar (28 out of 174 patents)

Sagy Charel Levy (17 out of 64 patents)

Fredrick B Jenne (12 out of 60 patents)

4. Igor Polishchuk (8 out of 55 patents)

5. Sam G Geha (7 out of 26 patents)

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