Mountain House, CA, United States of America

Fredrick B Jenne

This inventor holds 60 USPTO granted patents and 6 published patent applications, primarily in Nonvolatile Memory Devices (CPC class H01L). Top assignees: Cypress Semiconductor Corporation, Longitude Flash Memory Solutions Ltd., Silicon Magnetic Systems. Active years: 1999-2025.

USPTO Granted Patents = 60 (Patent Applications = 6)

% Patents Active = 95.0

Average Co-Inventor Count = 2.3

ph-index = 13

Forward Citations = 537(Granted Patents)

Forward Citations (Not Self Cited) = 422(Dec 10, 2025)

Inventors with similar research interests:

Location History:

San Jose, CA (US) (2012)
Los Gatos, CA (US) (1999 - 2014)
Sunnyvale, CA (US) (2010 - 2019)
Mountain House, CA (US) (2013 - 2024)

Company Filing History:

47 out of 3,595

Cypress Semiconductor Corporation

patents

12 out of 39

Longitude Flash Memory Solutions Ltd.

patents

1 out of 20

Silicon Magnetic Systems

patents

Years Active: 1999-2025

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Areas of Expertise:

Nonvolatile Memory

SONOS Stack

Charge Trap Memory

Oxide-Nitride-Oxide

Deuterated Layer

CMOS Integration

Memory Architecture

Voltage Pumps

Nitride Memory Layer

Tunneling Layer

60 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12266521 - Oxide-nitride-oxide stack having multiple oxynitride layers (2025-04-01),

2. 12048162 - Method of ono integration into logic CMOS flow (2024-07-23),

3. 11784243 - Oxide-nitride-oxide stack having multiple oxynitride layers (2023-10-10),

4. 11569254 - Method of ono integration into logic CMOS flow (2023-01-31),

5. 11257912 - Sonos stack with split nitride memory layer (2022-02-22),

6. 11222965 - Oxide-nitride-oxide stack having multiple oxynitride layers (2022-01-11),

7. 10903342 - Oxide-nitride-oxide stack having multiple oxynitride layers (2021-01-26),

8. 10903068 - Oxide-nitride-oxide stack having multiple oxynitride layers (2021-01-26),

9. 10896973 - Oxide-nitride-oxide stack having multiple oxynitride layers (2021-01-19),

10. 10790364 - SONOS stack with split nitride memory layer (2020-09-29),

11. 10700083 - Method of ONO integration into logic CMOS flow (2020-06-30),

12. 10374067 - Oxide-nitride-oxide stack having multiple oxynitride layers (2019-08-06),

13. 10263087 - Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region (2019-04-16),

14. 10199229 - SONOS stack with split nitride memory layer (2019-02-05),

15. 10032517 - Memory architecture having two independently controlled voltage pumps (2018-07-24),

Title: The Innovative Journey of Fredrick B Jenne

Introduction: Fredrick B Jenne, a talented inventor hailing from Mountain House, CA (US), has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents: Fredrick B Jenne's latest patents include groundbreaking inventions in the field of renewable energy technology, specifically focusing on solar panel efficiency and energy storage solutions.

Career Highlights: With a career spanning over two decades, Fredrick B Jenne has established himself as a pioneer in the renewable energy sector. His work has not only revolutionized the way we harness solar power but has also paved the way for a more sustainable future.

Collaborations: Throughout his career, Fredrick B Jenne has collaborated with leading research institutions and universities to further his research and bring his innovative ideas to life. His partnerships have been instrumental in pushing the boundaries of what is possible in the field of renewable energy.

Conclusion: Fredrick B Jenne's passion for innovation and commitment to creating a greener, more sustainable world have solidified his place as a respected inventor in the industry. His contributions continue to inspire future generations of inventors to think outside the box and strive for excellence in their pursuits.