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For the Inventor, By the Inventor

Boise, ID, United States of America

Ian C Laboriante

LinkedIn
USPTO Granted Patents = 13 

Average Co-Inventor Count = 5.3

ph-index = 4

Forward Citations = 65(Granted Patents)


Company Filing History:

goldMedal13 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2014-2024

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13 patents (USPTO):
1. 11937429 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2024-03-19),
2. 11763889 - Multi-decks memory device including inter-deck switches (2023-09-19),
3. 11289163 - Multi-decks memory device including inter-deck switches (2022-03-29),
4. 11239252 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2022-02-01),
5. 10825523 - Multi-decks memory device including inter-deck switches (2020-11-03),
6. 10720446 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2020-07-21),
7. 10580782 - Methods of forming an array of elevationally-extending strings of memory cells individually comprising a programmable charge-storage transistor (2020-03-03),
8. 10475515 - Multi-decks memory device including inter-deck switches (2019-11-12),
9. 10157933 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2018-12-18),
10. 9653307 - Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures (2017-05-16),
11. 8932933 - Methods of forming hydrophobic surfaces on semiconductor device structures, methods of forming semiconductor device structures, and semiconductor device structures (2015-01-13),
12. 8809157 - Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion (2014-08-19),
13. 8633084 - Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion (2014-01-21),

Title: The Innovative Contributions of Ian C. Laboriante in Memory Technology

Introduction: Ian C. Laboriante, based in Boise, Idaho, stands out as an influential inventor with a significant portfolio. With 13 patents to his name, his work primarily focuses on advancing memory technology, showcasing a blend of creativity and technical expertise.

Latest Patents: Laboriante's latest contributions to the field include two notable patents. The first patent details integrated structures comprising materials containing silicon and nitrogen, alongside carbon, oxygen, boron, and phosphorus. This invention highlights an innovative design of vertically-stacked conductive levels and dielectric levels, which has applications in NAND memory arrays. The second patent outlines a multi-deck memory device featuring inter-deck switches, enhancing memory efficiency through its unique architecture that includes various control gates and memory cells strategically placed across different levels.

Career Highlights: Ian C. Laboriante is currently associated with Micron Technology Incorporated, a leader in the semiconductor industry known for its cutting-edge memory and storage solutions. His technical expertise and pioneering spirit contribute significantly to the company's innovative projects, reinforcing its position in the competitive landscape of memory technologies.

Collaborations: Throughout his career, Laboriante has collaborated with esteemed colleagues, including Benben Li and Akira Goda. These collaborations have sparked innovative ideas and solutions, furthering the development of advanced memory technologies and exemplifying the importance of teamwork in the field of invention.

Conclusion: Ian C. Laboriante's contributions to memory technology through his numerous patents underscore his role as a key innovator in the industry. His work not only enhances memory storage solutions but also paves the way for future advancements in the field, solidifying his legacy as a prominent inventor in the world of technology.

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