The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Dec. 13, 2013
Micron Technology, Inc., Boise, ID (US);
D. V. Nirmal Ramaswamy, Boise, ID (US);
Beth R. Cook, Meridian, ID (US);
Lei Bi, Boise, ID (US);
Wayne Huang, Boise, ID (US);
Ian C. Laboriante, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile