Singapore, Singapore

Hyunsoo Yang

This inventor holds 17 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Spintronics Devices. Top assignees: National University of Singapore, Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyunsoo Yang. Retrieved from https://idiyas.com/inventor/hyunsoo-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 88.2

 

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 43(Granted Patents)


Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Spintronics
Magnetic Memory
Spin-Orbit Coupling
Energy Harvesting
Spin Torque Switching
Graphene Sensors
Magnetoresistance
Spin Current Generation
Ferrimagnet
Nondestructive Testing
Magnetization Manipulation
Terahertz Devices
17 patents (USPTO):Explore Patents

Title: Innovations of Hyunsoo Yang: Pioneering Spintronic Technologies

Introduction

Hyunsoo Yang, an accomplished inventor based in Singapore, holds an impressive portfolio of 16 patents. His pioneering work predominantly revolves around spintronics, a cutting-edge field that leverages the intrinsic spin of electrons alongside their charge to revolutionize semiconductor technology.

Latest Patents

Among his latest contributions to the field are two significant patents:

1. **Spin torque device having a spin current polarized at a canting angle of out-of-plane spin** - This invention outlines a spin torque device designed to impact spintronics applications. It features a magnetic layer capable of switching its magnetization direction along a primary axis, coupled with a spin source layer that generates a spin current from an injected current perpendicular to this axis. The innovation revolves around the scattering of electrons with varying spins to create a spin current that diffuses into the magnetic layer, effectively producing spin torque.

2. **Semiconductor memory device with spin-orbit coupling channel** - This patent specifies a semiconductor memory device that includes data storage patterns and a spin-orbit coupling (SOC) channel layer, enhancing the interaction with the data storage. The SOC channel provides necessary spin-orbit torque, ensuring efficient data manipulation through sophisticated read and write access configurations.

Career Highlights

Hyunsoo Yang has significantly contributed to academia and research through his positions at esteemed institutions such as the National University of Singapore and Yonsei University. His work in these roles has strengthened the educational foundations and technological advancements in spintronic research.

Collaborations

Throughout his career, Yang has collaborated with notable peers including Xuepeng Qiu and Jae Hyun Kwon. These partnerships have emphasized the collaborative nature of innovation, often leading to breakthroughs in complex research areas and applications.

Conclusion

Hyunsoo Yang’s innovative contributions have established him as a key figure in the field of spintronics. His patents exemplify how meticulous research and collaboration can lead to revolutionary developments in technology. As his work continues to evolve, the scientific community eagerly anticipates his future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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