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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10923651 B1

PDFFull Text
Date of Patent:
Feb. 16, 2021

Filed:

Aug. 16, 2018

Spin orbit materials for efficient spin current generation

Applicant:

National University of Singapore, Singapore, SG;

Inventors:

Rajagopalan Ramaswamy, Singapore, SG;

Yi Wang, Singapore, SG;

Shuyuan Shi, Singapore, SG;

Hyunsoo Yang, Singapore, SG;

Assignee:

National University of Singapore, Singapore, SG;

Attorneys:

Cesari and McKenna, LLP

James A. Blanchette

Primary Examiner:

Hien N Nguyen

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/06 (2006.01); H01L 27/22 (2006.01); G11C 19/08 (2006.01); H03K 19/18 (2006.01); H01L 43/04 (2006.01); G11C 11/18 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); G11C 19/0841 (2013.01); H01L 27/222 (2013.01); H01L 43/04 (2013.01); H01L 43/065 (2013.01); H03K 19/18 (2013.01);
Abstract

In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., BiSe, BiSe, BiSb, etc.) or a TI/non-magnetic metal (e.g., BiSe/Ag, BiSe/Ag, BiSb/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.

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Ramaswamy, Rajagopalan. (2021). Spin orbit materials for efficient spin current generation (U.S. Patent No. 10923651). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10923651

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