The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Aug. 16, 2018
Applicant:
National University of Singapore, Singapore, SG;
Inventors:
Rajagopalan Ramaswamy, Singapore, SG;
Yi Wang, Singapore, SG;
Shuyuan Shi, Singapore, SG;
Hyunsoo Yang, Singapore, SG;
Assignee:
National University of Singapore, Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/06 (2006.01); H01L 27/22 (2006.01); G11C 19/08 (2006.01); H03K 19/18 (2006.01); H01L 43/04 (2006.01); G11C 11/18 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); G11C 19/0841 (2013.01); H01L 27/222 (2013.01); H01L 43/04 (2013.01); H01L 43/065 (2013.01); H03K 19/18 (2013.01);
Abstract
In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., BiSe, BiSe, BiSb, etc.) or a TI/non-magnetic metal (e.g., BiSe/Ag, BiSe/Ag, BiSb/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.