The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Jul. 21, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
National University of Singapore, Singapore, SG;
Abstract
A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.