The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Jul. 21, 2017
Applicant:
National University of Singapore, Singapore, SG;
Inventors:
Assignee:
National University of Singapore, Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/165 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H01F 10/329 (2013.01); H01L 43/08 (2013.01); H01F 10/3222 (2013.01);
Abstract
In one embodiment, a spin torque device uses a thick (e.g., >1 nm, and preferably >=2-6 nm) ferrimagnet (FIM) layer, instead of a thin (e.g., <1-2 nm) FM layer in the device's stack. The FIM layer may be composed of a cobalt-gadolinium (Co—Gd) alloy, cobalt-terbium (Co—Tb) multilayers, or other materials that provide anti-ferromagnetic coupling between two sub-lattices. Negative exchange interaction between the two sub-lattices of the FIM may allow for low current switching. High thermal stability and external magnetic field resistance may also be achieved.