Seoul, South Korea

Hyung-jun Kim

This inventor holds 23 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Korea Institute of Science and Technology, Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyung-jun Kim. Retrieved from https://idiyas.com/inventor/hyung-jun-kim-7pwmjdp6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 56.5

 

Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 192(Granted Patents)


Company Filing History:


Years Active: 2006-2026

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Areas of Expertise:
Semiconductor Device
Thin Film Transistor
Trench Structure
Epitaxial Lift-Off
Quantum Well
Spin Transistor
Nanopore Structure
Organometallic Compound
Three-Dimensional Stacking
Ferromagnet-Free
Ionic Device
Complementary Logic Device
23 patents (USPTO):Explore Patents

Certainly! Here is the article about inventor Hyung-jun Kim:

Title: The Innovative Work of Hyung-jun Kim

Introduction:

Hyung-jun Kim is a prolific inventor based in Seoul, South Korea, with a notable track record in the field of patents and innovations. With a total of 20 patents to his name, Kim has made significant contributions to the world of technology and research.

Latest Patents:

Among his latest inventions is a groundbreaking method for producing organometallic compounds and thin films using these compounds. This method ensures a high yield of organometallic compounds by reacting metal hexacarbonyl compounds with hexahydro-1,3,5-triazine compounds. The thin films fabricated using these compounds exhibit excellent properties, making them valuable in various applications. Another noteworthy patent is the semiconductor device using inter-diffusion, along with the method for its manufacturing. This innovative approach involves forming a sacrificial layer on a substrate and creating a germanium layer, which incorporates dopant atoms diffused from the substrate, resulting in enhanced semiconductor devices.

Career Highlights:

Hyung-jun Kim has garnered extensive experience through his work with prestigious institutions and companies. He has been associated with the Korea Institute of Science and Technology, where his expertise has been instrumental in driving research and development initiatives. Additionally, his contributions at Samsung Electronics Co., Ltd., have played a vital role in advancing technological innovations within the company.

Collaborations:

Throughout his career, Kim has collaborated with talented individuals in the industry, including Sung-Haeng Cho and Ki-Hun Jeong. These collaborations have led to the creation of groundbreaking technologies and patents, further solidifying Kim's reputation as a leading inventor in his field.

Conclusion:

In conclusion, Hyung-jun Kim stands out as a visionary inventor who continues to push the boundaries of technological innovation. His relentless pursuit of excellence and commitment to research have cemented his legacy in the world of patents and inventions. Seoul, South Korea, is indeed fortunate to have such a brilliant mind shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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