The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jun. 23, 2017
Korea Institute of Science and Technology, Seoul, KR;
Sanghyeon Kim, Seoul, KR;
Hyung-jun Kim, Seoul, KR;
Jae-Phil Shim, Seoul, KR;
Seong Kwang Kim, Seoul, KR;
Won Jun Choi, Seoul, KR;
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Abstract
A method for manufacturing a semiconductor device by epitaxial lift-off includes: forming a sacrificial layer containing an III-V compound on a first substrate, forming a device layer on the sacrificial layer, patterning the sacrificial layer and the device layer into a shape having an extending portion along a first direction determined based on a surface orientation of the III-V compound of the sacrificial layer, bonding the patterned device layer onto a second substrate, and etching the sacrificial layer by using an etching solution in a state where the device layer is bonded onto the second substrate, to remove the sacrificial layer and the first substrate. Using the method for manufacturing a semiconductor device, it is possible to improve a process yield and increase a process speed by using the difference in etch rates depending on crystal orientation, which is an inherent characteristic of an III-V compound, during an ELO process.