The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Jan. 26, 2017
Applicant:

Korea Institute of Science and Technology, Seoul, KR;

Inventors:

Hyung-Jun Kim, Seoul, KR;

Hyun Cheol Koo, Seoul, KR;

Chaun Jang, Seoul, KR;

Hansung Kim, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/778 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/28291 (2013.01); H01L 21/823807 (2013.01); H01L 29/36 (2013.01); H01L 29/66462 (2013.01); H01L 29/66984 (2013.01); H01L 29/7786 (2013.01);
Abstract

A complementary logic device includes i) a substrate, ii) a first semiconductor device located on the substrate and including a first channel layer, a carrier supply layer for supplying a carrier to the channel layer, and an upper cladding layer and a lower cladding layer respectively located at upper and lower portions of the channel layer, iii) a second semiconductor device located on the substrate and including a structure the same or similar to that of the first semiconductor device, iv) a source electrode located on the two semiconductors and made of a ferromagnetic body, v) a drain electrode located on the two semiconductors and made of a ferromagnetic body, and vi) a gate electrode located on the two semiconductors and located between the two electrodes so that a gate voltage is applied thereto to control a spin of electrons passing through the two channel layers.


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