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Hung-Ling Shih

This inventor holds 48 USPTO granted patents and 7 published patent applications, primarily in Embedded Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

USPTO Granted Patents = 48 (Patent Applications = 7)

% Patents Active = 95.8

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 38(Granted Patents)

Location History:

Hsinchu, TW (2023)
Tainan, TW (2016 - 2024)

Company Filing History:

48 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

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Areas of Expertise:

Embedded Memory

Deep Trench Isolation

ONON Sidewall Structure

Electrochemical Plating

Floating Gate Test

Strap-Cell Architecture

Device-Region Layout

High-Voltage Devices

Non-Volatile Memory

Semiconductor Manufacturing

Kink Effect Reduction

Memory Device Structure

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12641785 - Field effect transistor with top-protected gate electrode and methods for forming the same (2026-05-26),

2. 12396272 - Stilted pad structure (2025-08-19),

3. 12277977 - ONON sidewall structure for memory device and method for making the same (2025-04-14),

4. 12266577 - Deep trench isolation structure and method of making the same (2025-04-01),

5. 12211906 - Method for eliminating divot formation and semiconductor device manufactured using the same (2025-01-28),

6. 12176266 - Through-substrate via formation to enlarge electrochemical plating window (2024-12-24),

7. 12159803 - Profile of deep trench isolation structure for isolation of high-voltage devices (2024-12-03),

8. 12101931 - Strap-cell architecture for embedded memory (2024-09-24),

9. 12096629 - Floating gate test structure for embedded memory device (2024-09-17),

10. 12068032 - Device-region layout for embedded flash (2024-08-20),

11. 12009033 - ONON sidewall structure for memory device and method for making the same (2024-06-11),

12. 11869951 - Control gate strap layout to improve a word line etch process window (2024-01-09),

13. 11862535 - Through-substrate-via with reentrant profile (2024-01-02),

14. 11854621 - ONON sidewall structure for memory device and methods of making the same (2023-12-26),

15. 11830765 - Method of forming a deep trench isolation structure for isolation of high-voltage devices (2023-11-28),

Title: The Innovative Journey of Inventor Hung-Ling Shih

Introduction: Hung-Ling Shih, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Hung-Ling Shih's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Hung-Ling Shih has established himself as a pioneer in the renewable energy sector. His work has not only revolutionized the way we harness solar energy but has also paved the way for a more sustainable future.

Collaborations: Throughout his career, Hung-Ling Shih has collaborated with leading research institutions and universities to further his research and bring his innovative ideas to life. His partnerships have been instrumental in pushing the boundaries of renewable energy technology.

Conclusion: Hung-Ling Shih's passion for innovation and commitment to sustainability have solidified his position as a trailblazer in the field of renewable energy. His work continues to inspire future generations of inventors to push the boundaries of what is possible in the realm of technology.

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