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For the Inventor, By the Inventor

Tainan, Taiwan

Hung-Ling Shih

This inventor holds 48 USPTO granted patents and 7 published patent applications, primarily in Embedded Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Ling Shih. Retrieved from https://idiyas.com/inventor/hung-ling-shih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 48 

% Patents Active = 95.8

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 38(Granted Patents)


Location History:

  • Hsinchu, TW (2023)
  • Tainan, TW (2016 - 2024)

Company Filing History:

goldMedal48 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Embedded Memory
Deep Trench Isolation
ONON Sidewall Structure
Electrochemical Plating
Floating Gate Test
Strap-Cell Architecture
Device-Region Layout
High-Voltage Devices
Non-Volatile Memory
Semiconductor Manufacturing
Kink Effect Reduction
Memory Device Structure
48 patents (USPTO):Explore Patents
1. 12641785 - Field effect transistor with top-protected gate electrode and methods for forming the same (2026-05-26),
2. 12396272 - Stilted pad structure (2025-08-19),
3. 12277977 - ONON sidewall structure for memory device and method for making the same (2025-04-14),
4. 12266577 - Deep trench isolation structure and method of making the same (2025-04-01),
5. 12211906 - Method for eliminating divot formation and semiconductor device manufactured using the same (2025-01-28),
6. 12176266 - Through-substrate via formation to enlarge electrochemical plating window (2024-12-24),
7. 12159803 - Profile of deep trench isolation structure for isolation of high-voltage devices (2024-12-03),
8. 12101931 - Strap-cell architecture for embedded memory (2024-09-24),
9. 12096629 - Floating gate test structure for embedded memory device (2024-09-17),
10. 12068032 - Device-region layout for embedded flash (2024-08-20),
11. 12009033 - ONON sidewall structure for memory device and method for making the same (2024-06-11),
12. 11869951 - Control gate strap layout to improve a word line etch process window (2024-01-09),
13. 11862535 - Through-substrate-via with reentrant profile (2024-01-02),
14. 11854621 - ONON sidewall structure for memory device and methods of making the same (2023-12-26),
15. 11830765 - Method of forming a deep trench isolation structure for isolation of high-voltage devices (2023-11-28),

Title: The Innovative Journey of Inventor Hung-Ling Shih

Introduction: Hung-Ling Shih, a distinguished inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Hung-Ling Shih's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Hung-Ling Shih has established himself as a pioneer in the renewable energy sector. His work has not only revolutionized the way we harness solar energy but has also paved the way for a more sustainable future.

Collaborations: Throughout his career, Hung-Ling Shih has collaborated with leading research institutions and universities to further his research and bring his innovative ideas to life. His partnerships have been instrumental in pushing the boundaries of renewable energy technology.

Conclusion: Hung-Ling Shih's passion for innovation and commitment to sustainability have solidified his position as a trailblazer in the field of renewable energy. His work continues to inspire future generations of inventors to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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