The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

Aug. 04, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Ling Shih, Tainan, TW;

Ming Chyi Liu, Hsinchu, TW;

Jiech-Fun Lu, Madou Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76898 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip (IC). The IC includes a conductive structure disposed within a dielectric structure along a first side of a semiconductor substrate. An insulating structure is disposed along inner sidewalls of the semiconductor substrate. The inner sidewalls of the semiconductor substrate extend through the semiconductor substrate. A blocking layer is disposed along inner sidewalls of the insulating structure. A through-substrate via (TSV) includes a first portion and a second portion. The first portion extends from a second side of the semiconductor substrate to a horizontally-extending surface of the insulating structure that protrudes outward from the inner sidewalls of the insulating structure. The second portion extends from the first portion to the conductive structure and has a maximum width less than that of the first portion.


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