The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
May. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Wen Tseng, Hsinchu, TW;
Po-Wei Liu, Hsinchu, TW;
Hung-Ling Shih, Hsinchu, TW;
Tsung-Yu Yang, Hsinchu, TW;
Tsung-Hua Yang, Hsinchu, TW;
Yu-Chun Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for eliminating divot formation includes forming an isolation layer; forming a conduction layer which has an upper inclined boundary with the isolation layer such that the conduction layer has a portion located above a portion of the isolation layer at the upper inclined boundary; etching back the isolation layer; and etching back the conduction layer after etching back the isolation layer such that a top surface of the etched conduction layer is located at a level lower than a top surface of the etched isolation layer.