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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yu-Chun Chang

This inventor holds 14 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Tsing Hua University. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Chun Chang. Retrieved from https://idiyas.com/inventor/yu-chun-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 92.9

Average Co-Inventor Count = 5.8

ph-index = 2

Forward Citations = 23(Granted Patents)


Location History:

  • Hsinchu, TW (2015 - 2023)
  • Tainan, TW (2023 - 2024)

Company Filing History:

goldMedal13 out of 43,487 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 1,308 
 
National Tsing Hua University
 patents

Years Active: 2015-2025

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Areas of Expertise:
Semiconductor-on-Insulator
Memory Device
Polysilicon Growth
Isolation Structure
High Voltage
Nanoparticles
Divot Formation
Continuous Reactor
Semiconductor Device
Deep Trench
14 patents (USPTO):Explore Patents
1. 12456618 - Semiconductor-on-insulator (SOI) substrate and method for forming (2025-10-28),
2. 12277977 - ONON sidewall structure for memory device and method for making the same (2025-04-14),
3. 12211906 - Method for eliminating divot formation and semiconductor device manufactured using the same (2025-01-28),
4. 12148756 - Selective polysilicon growth for deep trench polysilicon isolation structure (2024-11-19),
5. 12062539 - Semiconductor-on-insulator (SOI) substrate and method for forming (2024-08-13),
6. 12009033 - ONON sidewall structure for memory device and method for making the same (2024-06-11),
7. 11854621 - ONON sidewall structure for memory device and methods of making the same (2023-12-26),
8. 11798836 - Semiconductor isolation structure and method of making the same (2023-10-24),
9. 11705328 - Semiconductor-on-insulator (SOI) substrate and method for forming (2023-07-18),
10. 11682578 - Multilayer isolation structure for high voltage silicon-on-insulator device (2023-06-20),
11. 11670689 - Method for eliminating divot formation and semiconductor device manufactured using the same (2023-06-06),
12. 11594597 - Selective polysilicon growth for deep trench polysilicon isolation structure (2023-02-28),
13. 11289330 - Semiconductor-on-insulator (SOI) substrate and method for forming (2022-03-29),
14. 9050655 - Continuous reactor and method for manufacturing nanoparticles (2015-06-09),

Title: Yu-Chun Chang: Innovator from Hsinchu

Introduction: Yu-Chun Chang is a renowned inventor hailing from Hsinchu, Taiwan. His innovative spirit and dedication to technological advancements have made him a prominent figure in the world of patents and inventions.

Latest Patents: Yu-Chun Chang's latest patents focus on cutting-edge technologies in the fields of semiconductor devices, nanotechnology, and renewable energy. His inventions have been instrumental in shaping the future of these industries.

Career Highlights: With a career spanning over two decades, Yu-Chun Chang has worked with leading research institutions and technology companies to develop groundbreaking solutions. His contributions have earned him recognition as a pioneer in his field.

Collaborations: Throughout his career, Yu-Chun Chang has collaborated with top engineers, scientists, and researchers to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of numerous projects.

Conclusion: In conclusion, Yu-Chun Chang's passion for innovation and his relentless pursuit of excellence have established him as a key player in the world of inventions. His work continues to inspire future generations of inventors and researchers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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