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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hung-Cheng Sung

USPTO Granted Patents = 99

Average Co-Inventor Count = 3.9

ph-index = 15

Forward Citations = 1,006(Granted Patents)

Forward Citations (Not Self Cited) = 953(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Paoshan Hsin-Chu, TW (1996)
  • Kaohsinng, TW (1997 - 1999)
  • Hsincha, TW (2002)
  • Hsin-chu, JP (2004)
  • Baoshan, Hsinchu, TW (2006)
  • Hsin-Chu, TW (1998 - 2013)
  • Kaohsiung, TW (1995 - 2017)

Company Filing History:

goldMedal99 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 1995-2017

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Areas of Expertise:
Non-Volatile Memory
Flash Memory
Split-Gate Technology
Semiconductor Devices
Memory Cell Design
Programming Efficiency
Erasable Flash EEPROM
Source Coupling Ratio
Self-Aligned Structures
Bit-Line Leakage
Embedded Flash Cells
Poly Tip Formation
99 patents (USPTO):Explore Patents
1. 9589095 - Method of converting between non-volatile memory technologies and system for implementing the method (2017-03-07),
2. 9171120 - Method of converting between non-volatile memory technologies and system for implementing the method (2015-10-27),
3. 8930866 - Method of converting between non-volatile memory technologies and system for implementing the method (2015-01-06),
4. 8906767 - Semiconductor device with self-aligned interconnects (2014-12-09),
5. 8610220 - Semiconductor device with self-aligned interconnects (2013-12-17),
6. 8384149 - Memory cell having a shared programming gate (2013-02-26),
7. 7951670 - Flash memory cell with split gate structure and method for forming the same (2011-05-31),
8. 7880217 - Programmable non-volatile memory (PNVM) device (2011-02-01),
9. 7667261 - Split-gate memory cells and fabrication methods thereof (2010-02-23),
10. 7652318 - Split-gate memory cells and fabrication methods thereof (2010-01-26),
11. 7608884 - Scalable split-gate flash memory cell with high source-coupling ratio (2009-10-27),
12. 7557402 - High write and erase efficiency embedded flash cell (2009-07-07),
13. 7417278 - Method to increase coupling ratio of source to floating gate in split-gate flash (2008-08-26),
14. 7335941 - Uniform channel programmable erasable flash EEPROM (2008-02-26),
15. 7326994 - Logic compatible non-volatile memory cell (2008-02-05),

Title: Inventor Hung-Cheng Sung

Introduction: Hung-Cheng Sung is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hung-Cheng Sung holds several patents in the areas of semiconductor technology, renewable energy, and advanced manufacturing processes, showcasing his diverse expertise and innovative mindset.

Career Highlights: With a career spanning over two decades, Hung-Cheng Sung has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Hung-Cheng Sung has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to drive forward progress in the tech sector.

Conclusion: Hung-Cheng Sung's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology with his groundbreaking inventions.

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