Hung-Cheng Sung

This inventor holds 99 USPTO granted patents, primarily in Non-Volatile Memory (CPC class H01L2-9788). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1995-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Cheng Sung. Retrieved from https://idiyas.com/inventor/hung-cheng-sung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 99

% Patents Active = 85.9

Average Co-Inventor Count = 3.9

ph-index = 15

Forward Citations = 1,009(Granted Patents)

Forward Citations (Not Self Cited) = 953(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Paoshan Hsin-Chu, TW (1996)
Kaohsinng, TW (1997 - 1999)
Hsincha, TW (2002)
Hsin-chu, JP (2004)
Baoshan, Hsinchu, TW (2006)
Hsin-Chu, TW (1998 - 2013)
Kaohsiung, TW (1995 - 2017)

Company Filing History:

99 out of 43,553

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 1995-2017

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Areas of Expertise:

Non-Volatile Memory

Split-Gate Flash

Memory Cell

Programming Efficiency

Semiconductor Device

Self-Aligned Interconnects

Flash EEPROM

Bit-Line Leakage

Coupling Ratio

Erasable Memory

Isolation Integrity

Fabrication Methods

99 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9589095 - Method of converting between non-volatile memory technologies and system for implementing the method (2017-03-07),

2. 9171120 - Method of converting between non-volatile memory technologies and system for implementing the method (2015-10-27),

3. 8930866 - Method of converting between non-volatile memory technologies and system for implementing the method (2015-01-06),

4. 8906767 - Semiconductor device with self-aligned interconnects (2014-12-09),

5. 8610220 - Semiconductor device with self-aligned interconnects (2013-12-17),

6. 8384149 - Memory cell having a shared programming gate (2013-02-26),

7. 7951670 - Flash memory cell with split gate structure and method for forming the same (2011-05-31),

8. 7880217 - Programmable non-volatile memory (PNVM) device (2011-02-01),

9. 7667261 - Split-gate memory cells and fabrication methods thereof (2010-02-23),

10. 7652318 - Split-gate memory cells and fabrication methods thereof (2010-01-26),

11. 7608884 - Scalable split-gate flash memory cell with high source-coupling ratio (2009-10-27),

12. 7557402 - High write and erase efficiency embedded flash cell (2009-07-07),

13. 7417278 - Method to increase coupling ratio of source to floating gate in split-gate flash (2008-08-26),

14. 7335941 - Uniform channel programmable erasable flash EEPROM (2008-02-26),

15. 7326994 - Logic compatible non-volatile memory cell (2008-02-05),

Title: Inventor Hung-Cheng Sung

Introduction: Hung-Cheng Sung is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hung-Cheng Sung holds several patents in the areas of semiconductor technology, renewable energy, and advanced manufacturing processes, showcasing his diverse expertise and innovative mindset.

Career Highlights: With a career spanning over two decades, Hung-Cheng Sung has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Hung-Cheng Sung has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to drive forward progress in the tech sector.

Conclusion: Hung-Cheng Sung's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology with his groundbreaking inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]