The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2008
Filed:
Oct. 12, 2005
Te-hsun Hsu, Hsinchu, TW;
Hung-cheng Sung, Hsinchu, TW;
Wen-ting Chu, Kaihsiung County, TW;
Shih-wei Wang, Hsin-Chu, TW;
Te-Hsun Hsu, Hsinchu, TW;
Hung-Cheng Sung, Hsinchu, TW;
Wen-Ting Chu, Kaihsiung County, TW;
Shih-Wei Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A non-volatile memory cell and a method of manufacturing the same are provided. The non-volatile memory cell includes a semiconductor substrate, a floating gate over the semiconductor substrate, a first, a second, and a third capacitor each having a first plate and sharing a common floating gate as a second plate. The non-volatile memory cell further includes a transistor connected in series with the first capacitor. The gate electrode of the transistor is connected to a wordline of a memory array, and a source/drain region is connected to a bitline.