Yai-Fen Lin

This inventor holds 67 USPTO granted patents, primarily in Split-Gate Flash Memory (CPC class 4382). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2008.

USPTO Granted Patents = 67

% Patents Active = 98.5

Average Co-Inventor Count = 4.6

ph-index = 13

Forward Citations = 582(Granted Patents)

Forward Citations (Not Self Cited) = 558(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Tron-Tour, TW (2000)
Tainan, TW (2002)
Taichung, TW (1999 - 2003)
Hsin-Chu, TW (2001 - 2003)
Non-Tour, TW (2000 - 2006)
Chung-Hsing Village, TW (2000 - 2008)

Company Filing History:

67 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 1999-2008

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Areas of Expertise:

Split-Gate Flash

Coupling Ratio

Memory Cell

Poly Tip Formation

P-Channel EEPROM

Nonvolatile Devices

Floating Gate

Self-Aligned Source

Erase Speed

Programming Speed

Memory Array

Chip Size Reduction

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7417278 - Method to increase coupling ratio of source to floating gate in split-gate flash (2008-08-26),

2. 7001809 - Method to increase coupling ratio of source to floating gate in split-gate flash (2006-02-21),

3. 6753569 - Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation (2004-06-22),

4. 6724036 - Stacked-gate flash memory cell with folding gate and increased coupling ratio (2004-04-20),

5. 6674118 - PIP capacitor for split-gate flash process (2004-01-06),

6. 6667509 - Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash (2003-12-23),

7. 6635922 - Method to fabricate poly tip in split gate flash (2003-10-21),

8. 6573555 - Source side injection programming and tip erasing P-channel split gate flash memory cell (2003-06-03),

9. 6538277 - Split-gate flash cell (2003-03-25),

10. 6534821 - Structure with protruding source in split-gate flash (2003-03-18),

11. 6509603 - P-channel EEPROM and flash EEPROM devices (2003-01-21),

12. 6504206 - Split gate flash cell for multiple storage (2003-01-07),

13. 6483159 - Undoped polysilicon as the floating-gate of a split-gate flash cell (2002-11-19),

14. 6465841 - Split gate flash memory device having nitride spacer to prevent inter-poly oxide damage (2002-10-15),

15. 6455887 - Nonvolatile devices with P-channel EEPROM device as injector (2002-09-24),

Title: The Inventor Yai-Fen Lin: Revolutionizing Non-Tour, TW

Introduction: Yai-Fen Lin is a pioneering inventor hailing from Non-Tour, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yai-Fen Lin holds several patents in the realm of artificial intelligence, robotics, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Yai-Fen Lin has worked with prestigious research institutions and leading tech companies, consistently pushing the boundaries of what is possible in the world of technology.

Collaborations: Throughout his career, Yai-Fen Lin has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and creativity that has led to the development of cutting-edge products and solutions.

Conclusion: Yai-Fen Lin's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology in Non-Tour, Taiwan, and beyond.