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For the Inventor, By the Inventor

Non-Tour, Taiwan

Yai-Fen Lin

USPTO Granted Patents = 67

Average Co-Inventor Count = 4.6

ph-index = 13

Forward Citations = 579(Granted Patents)


Inventors with similar research interests:


Location History:

  • Tron-Tour, TW (2000)
  • Tainan, TW (2002)
  • Taichung, TW (1999 - 2003)
  • Hsin-Chu, TW (2001 - 2003)
  • Non-Tour, TW (2000 - 2006)
  • Chung-Hsing Village, TW (2000 - 2008)

Company Filing History:

goldMedal67 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 1999-2008

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Areas of Expertise:
Split-Gate Flash
P-Channel EEPROM
Memory Cell Architecture
Nonvolatile Devices
Poly Tip Formation
Coupling Ratio Optimization
Self-Aligned Isolation
Erasing Speed Improvement
Data Retention Capacity
Nitride Spacer Technology
Memory Array Shrinking
PIP Capacitor Design
67 patents (USPTO):Explore Patents
1. 7417278 - Method to increase coupling ratio of source to floating gate in split-gate flash (2008-08-26),
2. 7001809 - Method to increase coupling ratio of source to floating gate in split-gate flash (2006-02-21),
3. 6753569 - Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation (2004-06-22),
4. 6724036 - Stacked-gate flash memory cell with folding gate and increased coupling ratio (2004-04-20),
5. 6674118 - PIP capacitor for split-gate flash process (2004-01-06),
6. 6667509 - Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash (2003-12-23),
7. 6635922 - Method to fabricate poly tip in split gate flash (2003-10-21),
8. 6573555 - Source side injection programming and tip erasing P-channel split gate flash memory cell (2003-06-03),
9. 6538277 - Split-gate flash cell (2003-03-25),
10. 6534821 - Structure with protruding source in split-gate flash (2003-03-18),
11. 6509603 - P-channel EEPROM and flash EEPROM devices (2003-01-21),
12. 6504206 - Split gate flash cell for multiple storage (2003-01-07),
13. 6483159 - Undoped polysilicon as the floating-gate of a split-gate flash cell (2002-11-19),
14. 6465841 - Split gate flash memory device having nitride spacer to prevent inter-poly oxide damage (2002-10-15),
15. 6455887 - Nonvolatile devices with P-channel EEPROM device as injector (2002-09-24),

Title: The Inventor Yai-Fen Lin: Revolutionizing Non-Tour, TW

Introduction: Yai-Fen Lin is a pioneering inventor hailing from Non-Tour, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yai-Fen Lin holds several patents in the realm of artificial intelligence, robotics, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Yai-Fen Lin has worked with prestigious research institutions and leading tech companies, consistently pushing the boundaries of what is possible in the world of technology.

Collaborations: Throughout his career, Yai-Fen Lin has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and creativity that has led to the development of cutting-edge products and solutions.

Conclusion: Yai-Fen Lin's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology in Non-Tour, Taiwan, and beyond.

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