The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Sep. 05, 2000
Chia-Ta Hsieh, Tainan, TW;
Di-Son Kuo, Hsinchu, TW;
Yai-Fen Lin, Non-Tour, TW;
Chrong Jung Lin, Hsin-Tien, TW;
Jong Chen, Taipei, TW;
Hung-Der Su, Kao-Hsiung, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A stacked-gate flash memory cell having a shallow trench isolation with a high-step of oxide and high lateral coupling is described. An unconventionally high isolation oxide layer is formed in a shallow trench isolation (STI) in a substrate. The deep opening in the space between the STIs is conformally lined with a polysilicon to form a floating gate extending above the opening. A conformal intergate oxide lines the entire floating gate. A layer of polysilicon overlays the intergate oxide and protrudes downward into the openings to form a control gate with increased coupling to the floating gate.