The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
May. 16, 2012
Yue-der Chih, Hsin-Chu, TW;
Jam-wem Lee, Zhubei, TW;
Cheng-hsiung Kuo, Jhubei, TW;
Tsung-che Tsai, Hsinchu, TW;
Ming-hsiang Song, Shin-Chu, TW;
Hung-cheng Sung, Hsinchu, TW;
Roger Wang, Taipei, TW;
Yue-Der Chih, Hsin-Chu, TW;
Jam-Wem Lee, Zhubei, TW;
Cheng-Hsiung Kuo, Jhubei, TW;
Tsung-Che Tsai, Hsinchu, TW;
Ming-Hsiang Song, Shin-Chu, TW;
Hung-Cheng Sung, Hsinchu, TW;
Roger Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.