The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Mar. 11, 2013
Applicants:

Hung-cheng Sung, Kaohsiung, TW;

Yue-der Chih, Hsinchu, TW;

Chia-hsing Chen, Hsinchu, TW;

Inventors:

Hung-Cheng Sung, Kaohsiung, TW;

Yue-Der Chih, Hsinchu, TW;

Chia-Hsing Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5068 (2013.01); H01L 29/66825 (2013.01);
Abstract

A method of designing a charge trapping memory array including designing a floating gate memory array layout. The floating gate memory layout includes a first type of transistors, electrical connections between memory cells of the floating gate memory array layout, a first input/output (I/O) interface, a first type of charge pump, and an I/O block. The method further includes modifying the floating gate memory array layout, using a processor, to replace the first type of transistors with a second type of transistors different than the first type of transistors. The method further includes determining an operating voltage difference between the I/O block and the second type of transistors. The method further includes modifying the floating gate memory array layout, using the processor, to modify the first charge pump based on the determined operating voltage difference.


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