The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Mar. 06, 2006
Chen-ming Huang, Hsinchu, TW;
Hung-cheng Sung, Hsinchu, TW;
Wen-ting Chu, Alian Township, Kaohsiung County, TW;
Chang-jen Hsieh, Hsinchu, TW;
Ya-chen Kao, Hsinchu, TW;
Chen-Ming Huang, Hsinchu, TW;
Hung-Cheng Sung, Hsinchu, TW;
Wen-Ting Chu, Alian Township, Kaohsiung County, TW;
Chang-Jen Hsieh, Hsinchu, TW;
Ya-Chen Kao, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A split gate memory cell. A floating gate is disposed on and insulated from a substrate comprising an active area separated by a pair of isolation structures formed therein. The floating gate is disposed between the pair of isolation structures and does not overlap the upper surface thereof. A cap layer is disposed on the floating gate. A control gate is disposed over the sidewall of the floating gate and insulated therefrom, partially extending to the upper surface of the cap layer. A source region is formed in the substrate near one side of the floating gate.