Hsinchu, Taiwan

Chang-Jen Hsieh


Average Co-Inventor Count = 5.2

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2007-2023

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7 patents (USPTO):Explore Patents

Title: **Innovative Mind: Chang-Jen Hsieh and His Contributions to Memory Devices**

Introduction

Chang-Jen Hsieh, a prominent inventor based in Hsinchu, Taiwan, has made significant strides in the field of memory devices. With a total of seven patents to his name, he has demonstrated a remarkable ability to innovate in semiconductor technology, contributing to advancements that enhance the efficiency and functionality of memory systems.

Latest Patents

Among Hsieh's latest inventions is a patent titled "Via landing enhancement for memory device." This innovative memory cell comprises dual sidewall spacers and various manufacturing methods. The design features a bottom electrode situated on a substrate, along with a resistance switching dielectric that possesses variable resistance. The top electrode is positioned above the dielectric, ensuring optimal functionality. The memory cell is uniquely designed with the first sidewall spacer extending upward alongside the resistance switching dielectric and the top electrode. Additionally, Hsieh has developed a second sidewall spacer that directly conforms to the first, enhancing the device's performance.

Career Highlights

Chang-Jen Hsieh is integral to the Taiwan Semiconductor Manufacturing Company Limited, where he leverages his expertise in semiconductor manufacturing to push the boundaries of memory device technology. His patents not only showcase his innovative approach but also highlight his contributions to the company’s reputation as a leader in the semiconductor industry.

Collaborations

Throughout his career, Hsieh has collaborated with esteemed colleagues, including Chen-Ming Huang and Hung-Cheng Sung. These collaborations have sparked numerous innovations, fostering an environment of creativity and research that is pivotal to the advancement of semiconductor technologies.

Conclusion

Chang-Jen Hsieh continues to be a vital player in the field of memory device innovation. His latest patents, combined with his career contributions and collaborations, underscore his role as a leading inventor. With a continued commitment to research and development, Hsieh is poised to make even more remarkable contributions in the future.

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