The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2007
Filed:
Apr. 27, 2004
Applicants:
Chang-jen Hsieh, Hsinchu, TW;
Hung-cheng Sung, Hsin-Chu, TW;
Te-hsun Hsu, Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A new method to form a floating gate isolation test structure in the manufacture of a memory device is achieved. The method comprises providing a substrate. A gate oxide layer is formed overlying the substrate. A floating gate conductor layer is deposited overlying the gate oxide layer. The floating gate conductor layer is patterned to expose the substrate for planned source regions. Ions are implanted into the exposed substrate to form the source regions. Contacting structures are formed to the source regions. Contacting structures are formed to the floating gate conductor layer.