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For the Inventor, By the Inventor

Hsin-Chu, Taiwan

Huang-Yi Huang

USPTO Granted Patents = 40 

Average Co-Inventor Count = 5.7

ph-index = 4

Forward Citations = 64(Granted Patents)


Company Filing History:

goldMedal40 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2007-2024

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40 patents (USPTO):
1. 11972951 - Selective formation of titanium silicide and titanium nitride by hydrogen gas control (2024-04-30),
2. 11444028 - Contact structure and formation thereof (2022-09-13),
3. 11295956 - Selective formation of titanium silicide and titanium nitride by hydrogen gas control (2022-04-05),
4. 11011611 - Semiconductor device with low resistivity contact structure (2021-05-18),
5. 10879075 - Wrap-around contact plug and method manufacturing same (2020-12-29),
6. 10714334 - Conductive feature formation and structure (2020-07-14),
7. 10700177 - Semiconductor device with low resistivity contact structure and method for forming the same (2020-06-30),
8. 10685842 - Selective formation of titanium silicide and titanium nitride by hydrogen gas control (2020-06-16),
9. 10658234 - Formation method of interconnection structure of semiconductor device (2020-05-19),
10. 10636664 - Wrap-around contact plug and method manufacturing same (2020-04-28),
11. 10510664 - Contact structure and formation thereof (2019-12-17),
12. 10475654 - Wrap-around contact plug and method manufacturing same (2019-11-12),
13. 10468260 - Wrap-around contact plug and method manufacturing same (2019-11-05),
14. 10283359 - Systems and methods for gap filling improvement (2019-05-07),
15. 10103099 - Semiconductor devices and methods of forming same (2018-10-16),

Title: Huang-Yi Huang: Pioneering Innovations in Semiconductor Technology

Introduction

Huang-Yi Huang, based in Hsin-Chu, Taiwan, is a distinguished inventor with an impressive portfolio of 40 patents to his name. His advancements in semiconductor technology significantly contribute to the field, influencing both research and industry practices.

Latest Patents

Huang's latest work includes groundbreaking patents such as the “Selective formation of titanium silicide and titanium nitride by hydrogen gas control.” This patent outlines a method for fabricating semiconductor structures by utilizing controlled hydrogen gas flows during chemical vapor deposition (CVD) processes. This innovative approach enhances the formation of layers essential for semiconductor functionality. Another notable patent is the “Contact structure and formation thereof,” which details the creation of a semiconductor device that includes an annealed cobalt plug. This plug exhibits enhanced conductivity due to its repaired lattice structure achieved through precise annealing processes.

Career Highlights

Huang-Yi Huang is currently affiliated with Taiwan Semiconductor Manufacturing Company Ltd., a leader in the sector of semiconductor manufacturing. His extensive experience and technical expertise have allowed him to remain at the forefront of technological advancements in this highly competitive industry.

Collaborations

Throughout his career, Huang has collaborated with esteemed colleagues including Ching-Hua Hsieh and Szu-Ping Tung. These partnerships have fostered an environment of innovation, contributing to the successful development of new technologies and patents that push the boundaries of semiconductor applications.

Conclusion

Huang-Yi Huang's contributions to the field of semiconductor technology through his patents and collaborations exemplify the impact of dedicated inventors in advancing industrial capabilities. His work continues to inspire future innovations and reflects a commitment to excellence in technology development.

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