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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10283359 B1

PDFFull Text
Date of Patent:
May. 07, 2019

Filed:

Apr. 17, 2017

Systems and methods for gap filling improvement

Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Chi-Yuan Chen, Hsinchu, TW;

Li-Ting Wang, Hsinchu, TW;

Teng-Chun Tsai, Hsinchu, TW;

Chun-I Tsai, Hsinchu, TW;

Wei-Jung Lin, Taipei, TW;

Huang-Yi Huang, Hsinchu, TW;

Cheng-Tung Lin, Hsinchu, TW;

Hong-Mao Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Attorney:

Jones Day

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
C23C 14/04 (2006.01); C23C 14/48 (2006.01); C23C 14/58 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/3115 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C23C 14/046 (2013.01); C23C 14/48 (2013.01); C23C 14/5873 (2013.01); H01L 21/02697 (2013.01); H01L 21/046 (2013.01); H01L 21/0415 (2013.01); H01L 21/2253 (2013.01); H01L 21/31155 (2013.01); H01L 21/3215 (2013.01); H01L 21/32134 (2013.01); H01L 21/32135 (2013.01); H01L 21/76224 (2013.01); H01L 21/76254 (2013.01); H01L 21/76859 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 29/66734 (2013.01); H01L 2224/05157 (2013.01); H01L 2924/01002 (2013.01); H01L 2924/01007 (2013.01); H01L 2924/01009 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01074 (2013.01);
Abstract

Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.

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