The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Aug. 31, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sung-Li Wang, Zhubei, TW;
Jyh-Cherng Sheu, Hsinchu, TW;
Huang-Yi Huang, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes forming a source/drain region, and in a vacuum chamber or a vacuum cluster system, preforming a selective deposition to form a metal silicide layer on the source/drain region, and a metal layer on dielectric regions adjacent to the source/drain region. The method further includes selectively etching the metal layer in the vacuum chamber, and selectively forming a metal nitride layer on the metal silicide layer. The selectively forming the metal nitride layer is performed in the vacuum chamber or a vacuum cluster system without vacuum break.