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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11011611 B1

PDFFull Text
Date of Patent:
May. 18, 2021

Filed:

Jun. 29, 2020

Semiconductor device with low resistivity contact structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Min-Hsiu Hung, Tainan, TW;

Yi-Hsiang Chao, New Taipei, TW;

Kuan-Yu Yeh, Taoyuan, TW;

Kan-Ju Lin, Kaohsiung, TW;

Chun-Wen Nieh, Zhubei, TW;

Huang-Yi Huang, Hsinchu, TW;

Chih-Wei Chang, Hsinchu, TW;

Ching-Hwanq Su, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Zandra V Smith

Assistant Examiner:

John M Parker

Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/3213 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 21/306 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/321 (2013.01); H01L 21/32053 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 21/76889 (2013.01); H01L 21/76897 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/30604 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 29/0847 (2013.01); H01L 29/41783 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a conductive region made of silicon, germanium or a combination thereof. The semiconductor device structure also includes an insulating layer over the semiconductor substrate and a fill metal material layer in the insulating layer. In addition, the semiconductor device structure includes a nitrogen-containing metal silicide or germanide layer between the conductive region and the fill metal material layers.

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