The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Aug. 14, 2017
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Hong-Mao Lee, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Chia-Han Lai, Zhubei, TW;
Chi-Hsuan Ni, Chupei, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Huang-Yi Huang, Hsin-chu, TW;
Chi-Yuan Chen, Hsinchu, TW;
Li-Ting Wang, Hsinchu, TW;
Teng-Chun Tsai, Hsinchu, TW;
Wei-Jung Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.