Chupei, Taiwan

Chi-Hsuan Ni


Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Hischiu, TW (2016)
  • Chupei, TW (2017 - 2022)

Company Filing History:


Years Active: 2016-2022

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4 patents (USPTO):Explore Patents

Title: Chi-Hsuan Ni: Innovator in Semiconductor Technology

Introduction

Chi-Hsuan Ni is a prominent inventor based in Chupei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Chi-Hsuan Ni's latest patents is titled "Contact structure and formation thereof." This patent describes a semiconductor device that includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device. The annealed cobalt plug features a repaired lattice structure, which is achieved by annealing a cobalt plug at a specific temperature for a designated duration while exposing it to a first gas. This innovative approach results in a more regular or homogenized lattice structure, leading to increased conductivity and reduced resistivity compared to non-annealed cobalt plugs.

Career Highlights

Chi-Hsuan Ni is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative mindset have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Chi-Hsuan Ni has collaborated with notable colleagues, including Hong-Mao Lee and Teng-Chun Tsai. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Chi-Hsuan Ni's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

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