Taiwan Semiconductor Manufacturing Comp. Ltd.

Huang-Yi Huang

Ching-Hua Hsieh

Cheng-Tung Lin

Szu-Ping Tung

Teng-Chun Tsai

Li-Ting Wang

Chih-Chien Chi

Min-Hsiu Hung

Chih-Wei Chang

Sung-Li Wang

Wei-Jung Lin

Jyh-Cherng Sheu

Hong-Mao Lee

Chi-Yuan Chen

Yi-Hsiang Chao

Chi On Chui

Yu-Ting Lin

De-Fang Chen

Huicheng Chang

Huan-Just Lin

Ming-Hsing Tsai

Cheng-Wei Chang

Hui-Cheng Chang

Chia-Han Lai

Kao-Feng Lin

Chi-Hsuan Ni

Chung-Chi Ko

Bing-Hung Chen

Mei-Ling Chen

Yee-Chia Yeo

Chun-Chieh Lin

Ching-Hwanq Su

Chen-Yuan Kao

Neng-Jye Yang

Chun-I Tsai

Rueijer Lin

Chun-Wen Nieh

Kan-Ju Lin

Kuan-Yu Yeh

Pei-Wen Wu

Yida Li

Chun-Chieh Wang

Chih-Tang Peng

Shing-Chyang Pan

Chi-On Chui

Hsi-Kuei Cheng

Yao-Jen Chang

Chien-Hsun Wang

Hung-Ta Lin

Minghsing Tsai

Hsien-Ping Feng

Wen-Jiun Liu

Kuan-Chia Chen

Yuh-Da Fan

Steven Lin

Min-Yuan Cheng

The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Contact structure and formation thereof

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a conductive region made of silicon, germanium or a combination thereof. The semiconductor device structure also includes an insulating layer over the semiconductor substrate and a fill metal material layer in the insulating layer. In addition, the semiconductor device structure includes a nitrogen-containing metal silicide or germanide layer between the conductive region and the fill metal material layers.

Semiconductor device with low resistivity contact structure

A method includes forming a source/drain region, and in a vacuum chamber or a vacuum cluster system, preforming a selective deposition to form a metal silicide layer on the source/drain region, and a metal layer on dielectric regions adjacent to the source/drain region. The method further includes selectively etching the metal layer in the vacuum chamber, and selectively forming a metal nitride layer on the metal silicide layer. The selectively forming the metal nitride layer is performed in the vacuum chamber or a vacuum cluster system without vacuum break.

Wrap-around contact plug and method manufacturing same

Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Conductive feature formation and structure

A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate including a conductive region made of silicon, germanium or a combination thereof. The method also includes forming an insulating layer over the semiconductor substrate and forming an opening in the insulating layer to expose the conductive region. The method also includes performing a deposition process to form a metal layer over a sidewall and a bottom of the opening, so that a metal silicide or germanide layer is formed on the exposed conductive region by the deposition process. The method also includes performing a first in-situ etching process to etch at least a portion of the metal layer and forming a fill metal material layer in the opening.

Semiconductor device with low resistivity contact structure and method for forming the same

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

Formation method of interconnection structure of semiconductor device

Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.

Systems and methods for gap filling improvement

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Hsin-Chu, Taiwan

Huang-Yi Huang