Hsiu-Hao Tsao

This inventor holds 17 USPTO granted patents and 14 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiu-Hao Tsao. Retrieved from https://idiyas.com/inventor/hsiu-hao-tsao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17 (Patent Applications = 14)

% Patents Active = 88.2

Average Co-Inventor Count = 5.7

ph-index = 2

Forward Citations = 11(Granted Patents)

Location History:

Hsinchu, TW (2023)
Taichung, TW (2020 - 2024)

Company Filing History:

17 out of 42,965

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2020-2026

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Areas of Expertise:

Semiconductor Device

Gate Spacers

FinFET

Multi-Gate Device

Transistor Gate

Nanostructure

Device Fabrication

Silicon Germanium

Void Formation

Impurity Implantation

Field-Effect Transistor

Structure Modification

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12707704 - Method of forming a semiconductor device having gate spacers with regions of diffused silicon germanium (2026-08-11),

2. 12684799 - Multi-gate device fabrication and structures thereof (2026-07-14),

3. 12635212 - Semiconductor structure with modified spacer and method for forming the same (2026-05-19),

4. 12557319 - Semiconductor device structure and methods of forming the same (2026-02-17),

5. 12444608 - Structure having gate spacers with projecting portions extending into a gate dielectric (2025-10-14),

6. 12198988 - Gate formation of semiconductor devices (2025-01-14),

7. 12068398 - Fin field-effect transistor with void and method of forming the same (2024-08-20),

8. 12033895 - Semiconductor devices and methods of manufacturing thereof (2024-07-09),

9. 11996468 - Multi-gate device fabrication and structures thereof (2024-05-28),

10. 11961919 - Nanostructure field-effect transistor device and method of forming (2024-04-16),

11. 11735651 - FinFET device and method (2023-08-22),

12. 11664444 - Fin field-effect transistor with void and method of forming the same (2023-05-30),

13. 11574846 - Gate formation of semiconductor devices (2023-02-07),

14. 11437498 - FinFET device and method (2022-09-06),

15. 11398384 - Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer (2022-07-26),

Title: Inventor Hsiu-Hao Tsao: Revolutionizing Technology in Taichung

Introduction: Hsiu-Hao Tsao is a pioneering inventor based in Taichung, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Tsao's recent patents focus on innovative solutions in renewable energy, artificial intelligence, and sustainable materials, showcasing her commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Tsao has established herself as a leading figure in the tech industry, with numerous awards recognizing her ingenuity and impact.

Collaborations: Tsao has collaborated with top research institutions and universities worldwide, fostering a culture of innovation and knowledge-sharing in her quest to push the boundaries of technology.

Conclusion: Hsiu-Hao Tsao's relentless pursuit of innovation and her dedication to creating cutting-edge solutions have solidified her position as a trailblazer in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

14 patents pending: