The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Jul. 25, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chung-Shu Wu, Taoyuan, TW;
Ying-Ya Hsu, Hsinchu, TW;
Ching-Yu Pan, Kaohsiung, TW;
Hsiu-Hao Tsao, Taichung, TW;
An Chyi Wei, Hsinchu, TW;
Yuan-Hung Chiu, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/02236 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/7853 (2013.01);
Abstract
A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.