The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Feb. 06, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chang-Jhih Syu, Hsinchu, TW;
Chih-Hao Yu, Tainan, TW;
Chang-Yun Chang, Taipei, TW;
Hsiu-Hao Tsao, Hsinchu, TW;
Yu-Jiun Peng, Kaohsiung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method includes forming an active region on a substrate, forming a sacrificial gate stack engaging the active region, measuring a gate length of the sacrificial gate stack at a height lower than a top surface of the active region, selecting an etching recipe based on the measured gate length of the sacrificial gate stack, etching the sacrificial gate stack with the etching recipe to form a gate trench, and forming a metal gate stack in the gate trench.