The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Feb. 11, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Jiun Peng, Hsinchu, TW;
Hsiu-Hao Tsao, Taichung, TW;
Shu-Han Chen, Hsinchu, TW;
Chang-Jhih Syu, Hsinchu, TW;
Kuo-Feng Yu, Zhudong Township, TW;
Jian-Hao Chen, Hsinchu, TW;
Chih-Hao Yu, Tainan, TW;
Chang-Yun Chang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In an embodiment, a structure includes: a semiconductor substrate; a gate spacer over the semiconductor substrate, the gate spacer having an upper portion and a lower portion, a first width of the upper portion decreasing continually in a first direction extending away from a top surface of the semiconductor substrate, a second width of the lower portion being constant along the first direction; a gate stack extending along a first sidewall of the gate spacer and the top surface of the semiconductor substrate; and an epitaxial source/drain region adjacent a second sidewall of the gate spacer.