The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 25, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsu Ming Hsiao, Hsinchu, TW;
Ming-Jhe Sie, Taipei, TW;
Hsiu-Hao Tsao, Taichung, TW;
Hong Pin Lin, Hsinchu, TW;
Che-fu Chen, Taipei, TW;
An Chyi Wei, Hsinchu, TW;
Yi-Jen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method, for making a semiconductor device, includes forming a first fin over a substrate. The method includes forming a dummy gate stack on the first fin. The method includes forming a first gate spacer along a side of the dummy gate stack. The first gate spacer includes a first dielectric material. The method includes forming a second gate spacer along a side of the first gate spacer. The second gate spacer includes a semiconductor material. The method includes forming a source/drain region in the first fin adjacent the second gate spacer. The method includes removing at least a portion of the second gate spacer to form a void extending between the first gate spacer and the source/drain region.