Hsinchu, Taiwan

Hsu Ming Hsiao

USPTO Granted Patents = 6 

Average Co-Inventor Count = 4.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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6 patents (USPTO):

Title: Hsu Ming Hsiao: Innovator in Semiconductor Technology

Introduction

Hsu Ming Hsiao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Hsu Ming Hsiao's latest patents include a method of manufacturing a semiconductor device and a semiconductor device itself. In his patented method, a sacrificial gate structure is formed over a substrate, followed by the creation of multiple dielectric layers. The process involves planarizing and recessing these layers to expose the sacrificial gate structure. Additionally, he has developed a method for trimming spacer layers on sidewalls of a dummy gate structure during a replacement gate process. This method utilizes a radical surface treatment operation to etch the spacer layers, thereby reducing the likelihood of defects in the semiconductor device.

Career Highlights

Hsu Ming Hsiao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative approaches have contributed to advancements in semiconductor manufacturing processes, enhancing the efficiency and reliability of electronic devices.

Collaborations

Hsu has collaborated with notable colleagues, including Hong Pin Lin and Che-fu Chen, who share his commitment to advancing semiconductor technology.

Conclusion

Hsu Ming Hsiao's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.

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