Hsing-Huang Tseng

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Motorola Corporation, Freescale Semiconductor,inc.. Active years: 1994-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsing-Huang Tseng. Retrieved from https://idiyas.com/inventor/hsing-huang-tseng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 16

Forward Citations = 943(Granted Patents)

Company Filing History:

Freescale Semiconductor,inc.

patents

Years Active: 1994-2006

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Areas of Expertise:

Semiconductor Device

Dielectric Layer

Gate Oxide

MOSFET

Trench Isolation

Field Isolation

Nitrogen Incorporation

Integrated Circuit

Metal Oxide

Vapor Deposition

High Dielectric Constant

Dual Gate

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7001852 - Method of making a high quality thin dielectric layer (2006-02-21),

2. 6787421 - Method for forming a dual gate oxide device using a metal oxide and resulting device (2004-09-07),

3. 6297173 - Process for forming a semiconductor device (2001-10-02),

4. 6146948 - Method for manufacturing a thin oxide for use in semiconductor (2000-11-14),

5. 6063698 - Method for manufacturing a high dielectric constant gate oxide for use (2000-05-16),

6. 5972804 - Process for forming a semiconductor device (1999-10-26),

7. 5960289 - Method for making a dual-thickness gate oxide layer using a (1999-09-28),

8. 5830802 - Process for reducing halogen concentration in a material layer during (1998-11-03),

9. 5731238 - Integrated circuit having a jet vapor deposition silicon nitride film (1998-03-24),

10. 5726087 - Method of formation of semiconductor gate dielectric (1998-03-10),

11. 5712208 - Methods of formation of semiconductor composite gate dielectric having (1998-01-27),

12. 5712177 - Method for forming a reverse dielectric stack (1998-01-27),

13. 5707889 - Process for forming field isolation (1998-01-13),

14. 5580815 - Process for forming field isolation and a structure over a semiconductor (1996-12-03),

15. 5571734 - Method for forming a fluorinated nitrogen containing dielectric (1996-11-05),

Title: The Innovative Journey of Hsing-Huang Tseng

Introduction: Hsing-Huang Tseng, a talented inventor based in Austin, TX, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Hsing-Huang Tseng holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Tseng has successfully developed cutting-edge solutions that have improved efficiency and effectiveness in various industries.

Collaborations: Throughout his career, Hsing-Huang Tseng has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Hsing-Huang Tseng's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire and shape the future of technological advancements.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]