The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1998
Filed:
May. 25, 1995
Hsing-Huang Tseng, Austin, TX (US);
Philip J Tobin, Austin, TX (US);
Keith E Witek, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor dielectric (10) is formed by providing a base layer (12) having a surface. A thin interface layer (13) is formed at the surface of the base layer (12). The thin interface layer has a substantial concentration of both nitrogen and fluorine. A thermal oxide layer (14) is formed overlying the interface layer (13). A deposited dielectric layer (16) is formed overlying the thermal oxide layer (14). The deposited dielectric layer (16) is optionally densified by a thermal heat cycle. The deposited dielectric layer (16) has micropores that are misaligned to micropores in the thermal oxide layer (14) to provide enhanced features which the nitrogen/fluorine interface further improves the dielectric's features.